There are several types of insulated gate field-effect transistors (IGFETs) in common use.
The early term metal oxide semiconductor field-effect transistor (MOSFET) is still in
use, and MOSFET is usually acceptable as a generic term for IGFETs. The metal oxide, and the insulation in the IGFET, is the insulating material between the gate terminal and the substrate between the source and drain terminals. This insulator must have very low leakage, of course, but another requirement for good performance of the transistor is that the dielectric constant of the material must be very high.
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